Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor |
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| Authors: | M Mamor Y Fu O Nur M Willander S Bengtsson |
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| Institution: | (1) Physical Electronics and Photonics, Microtechnology Centre at Chalmers, Department of Physics, Chalmers University of Technology and Gothenburg University, 41296 Gothenburg, Sweden, SE;(2) Solid State Electronics Laboratory, Microtechnology Centre at Chalmers, Department of Microelectronics, Chalmers University of Technology, 41296 Gothenburg, Sweden, SE |
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| Abstract: | We investigate, both experimentally and theoretically, current and capacitance (I–V/C–V) characteristics and the device performance
of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and ≈1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III–V triplers, the cut-off frequency of our Si-based SBV can be
as high as 0.5 THz.
Received: 9 February 2001 / Accepted: 9 February 2001 / Published online: 23 March 2001 |
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| Keywords: | PACS: 85 30 Kk 84 32 Tt 73 40 Ty 73 30 +y |
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