Electron density redistribution in Sn-doped Bi2Te3 |
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| Authors: | I V Gasenkova M K Zhitinskaya S A Nemov T E Svechnikova |
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| Institution: | (1) Institute of Electronics, Academy of Sciences of Belarus, Minsk;(2) St. Petersburg State Technical University, 195251 St. Petersburg, Russia;(3) A. A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia |
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| Abstract: | X-ray photoelectron spectroscopy is used to investigate the redistribution of the density of electronic states in the valence
band, and of the binding energies and chemical shifts of core levels in bismuth telluride caused by introduction of impurity
tin atoms. A substantial increase in the density of electronic states below the valence-band top at energies μ≈15–30 meV has been revealed. This feature in the energy spectrum accounts for the unusual behavior of the kinetic coefficients
in p-Bi2Te3:Sn crystals.
Fiz. Tverd. Tela (St. Petersburg) 41, 1969–1972 (November 1999) |
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