Positron annihilation in n- and p-type, B- and P-doped silicon crystals of 100 and 111 orientations

Positron annihilation spectra are compared for oriented and doped silicon crystals. A critical three-component deconvolution analysis of the lifetime spectra resulted in a previously undetected lifetime of 60 psec and 25% relative intensity. The sensitivity of the lifetimes to the details of analysis is discussed.