包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响

利用射频磁控溅射设备制备ZnO薄膜, 最终制备ZnO/Pt纳米粒子/ZnO 结构的金属-半导体-金属型紫外光电探测器. 研究了Pt纳米粒子处在ZnO薄膜层中的不同深度对金属-半导体-金属型紫外光电探测器响应性能的影响. 结果表明, 探测器的响应度随着Pt纳米粒子在ZnO薄膜层中所处深度的增大而升高. 在60 V偏压下, 包埋Pt最深的探测器在波长365 nm处取得响应度最大值1.4 A·W^-1, 包埋有Pt探测器的响应度最大值为无Pt 纳米粒子探测器响应度最大值的7倍. 结合对ZnO薄膜表面的表征及探测器各项性能的测试, 得出包埋Pt纳米粒子增强器件的响应性能可归因于表面等离子体增强散射.

Effect of Pt NPs in the film on the performances of ZnO-based metal-semiconductor-metal structured ultraviolet photodetector

In this paper, by a radio frequency magnetron sputtering equipment, the ZnO/Pt nanoparticles/ZnO thin film structure is fabricated on a SiO₂ substrate via three-step. And the metal-semiconductor-metal (MSM) structured ultraviolet (UV) photodetectors are built up. It is studied that the Pt nanoparticles in different depths of the layer of ZnO thin film affect the photoresponse performances of the MSM ultraviolet photodetector. The results show that the responsivity of the detector increases as Pt nanoparticles in ZnO thin film layers augment with the depth increasing. The responsivity of device is measured under 60 V bias, its photoresponse peak is at 365 nm, and the peak photoresponse is 1.4 A·W^-1, which is enhanced by 7 times that of the photodetector without Pt NPs. Considering the performance analyses of ZnO films and the photodetectors, it is clear that the excellent performances of the detector with Pt NPs in the film can result from the scattering of Pt NPs.