| As压调制的InAlAs超晶格对InAs纳米结构形貌的影响 |
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| 引用本文： | 杨新荣,周晓静,王海飞,郝美兰,谷云高,赵尚武,徐波,王占国. As压调制的InAlAs超晶格对InAs纳米结构形貌的影响[J]. 物理学报, 2015, 64(6): 68101-068101. DOI: 10.7498/aps.64.068101 |
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| 作者姓名： | 杨新荣 周晓静 王海飞 郝美兰 谷云高 赵尚武 徐波 王占国 |
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| 作者单位： | 1. 邯郸学院物理与电气工程系, 邯郸 056005;2. 中国科学院半导体研究所, 半导体材料重点实验室, 北京 100083;3. 中国科学院电工研究所, 北京 100080 |
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| 基金项目： | 国家自然科学基金(批准号:60990315);河北省科学技术研究与发展指导(批准号:Z2010112);河北省科技支撑计划(批准号:10213936,10213938);河北省自然科学基金(批准号:E2012109001);邯郸市科学技术研究与发展计划(批准号:1121120069-5,1121103183);河北省邯郸学院博士科研启动经费项目(批准号:2009002,2010005,2010007)资助的课题~~ |
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| 摘 要： | 利用固源分子束外延设备生长出InAs/InAlAs/InP(001)纳米结构材料, 探讨了As压调制的InAlAs超晶格对InAs纳米结构形貌的影响. 结果表明, As压调制的InAlAs超晶格能控制InAs量子线的形成, 导致高密度均匀分布的量子点的生长. 结果有利于进一步理解量子点形貌控制机理. 分析认为, InAs纳米结构的形貌主要由InAlAs层的各向异性应变分布和In吸附原子的各向异性扩散所决定.
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| 关 键 词： | InAlAs超晶格 InAs纳米结构形貌 As压调制 |
| 收稿时间： | 2014-07-08 |
Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructures grown on InAs/InAlAs/InP |
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| Yang Xin-Rong;Zhou Xiao-Jing;Wang Hai-Fei;Hao Mei-Lan;Gu Yun-Gao;Zhao Shang-Wu;Xu Bo;Wang Zhan-Guo. Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructures grown on InAs/InAlAs/InP[J]. Acta Physica Sinica, 2015, 64(6): 68101-068101. DOI: 10.7498/aps.64.068101 |
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| Authors: | Yang Xin-Rong Zhou Xiao-Jing Wang Hai-Fei Hao Mei-Lan Gu Yun-Gao Zhao Shang-Wu Xu Bo Wang Zhan-Guo |
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| Affiliation: | 1. Department of Physics and Electronic Engineering, Handan College, Handan 056005, China;2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | InAs/InAlAs/InP(001) nanostructure materials are grown using solid-source molecular beam epitaxy equipment. Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructure is investigated. The results show that As pressure-modulated InAlAs superlattice can suppress the quantum wires formation and results in quantum dot growth with a uniform size distribution. The analysis indicates that the morphology of InAs nanostructure is caused mainly by the anisotropic strain relaxation of InAlAs layers and the anisotropic surface migration of In adatoms. |
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| Keywords: | InAlAs superlattice InAs nanastructures As pressure-modulated |
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