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Single and Multiple Doping Effects on Charge Transport in Zigzag Silicene Nanoribbons
Authors:Jie Chen  Prof Xue‐Feng Wang  Prof Panagiotis Vasilopoulos  An‐Bang Chen  Prof Jian‐Chun Wu
Institution:1. College of Physics, Optoelectronics and Energy, Soochow University, 1 Shizi Street, Suzhou 215006 (China);2. Concordia University, Department of Physics, 7141 Sherbrooke Ouest, Montréal QC, H4B 1R6 (Canada);3. Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064 (China)
Abstract:A non‐equilibrium Green’s function technique combined with density functional theory is used to study the spin‐dependent electronic band structure and transport properties of zigzag silicene nanoribbons (ZSiNRs) doped with aluminum (Al) or phosphorus (P) atoms. The presence of a single Al or P atom induces quasibound states in ZSiNRs that can be observed as new dips in the electron conductance. The Al atom acts as an acceptor whereas the P atom acts as a donor if it is placed at the center of the ribbon. This behavior is reversed if the dopant is placed on the edges. Accordingly, an acceptor–donor transition is observed in ZSiNRs upon changing the dopant’s position. Similar results are obtained if two silicon atoms are replaced by two impurities (Al or P atoms) but the conductance is generally modified due to the impurity–impurity interaction. If the doping breaks the twofold rotational symmetry about the central line, the transport becomes spin‐dependent.
Keywords:conductance  doping  electronic structure  nanoribbons  silicene
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