Etching of buried photoresist layers and its application to the formation of three-dimensional layered structures

The fabrication of three-dimensional layered structures with 180-nm-thick TaO_x top layers supported by 1.5-μm-thick Mo pillars formed on a glass substrate is presented. The photoresist used for planarization was successfully removed through the TaO_x layers using heat treatment at 270 °C with mixed vapors of ethyl alcohol and pure water at high pressure for 3 h. Vacancies underlying the TaO_x layers were consequently formed. The possibility of rapid and lateral crystallization of amorphous silicon films was demonstrated when the silicon films formed on the TaO_x overlaying the vacancy regions were irradiated using a frequency-doubled YAG laser at 250 mJ/cm². Energy sensors using Cr/Al metal wires, with a high sensitivity of 0.07 mW/cm², were also demonstrated using the present structure with vacancy regions for reduction of heat diffusion. Received: 22 January 2001 / Accepted: 24 January 2001 / Published online: 27 June 2001