Study of the surface electromigration of In on Si(111) surfaces by the use of micro-electron-beams

The surface electromigration (SE) of ultrathin In films on Si(111)4 × 1-In surfaces has been investigated using experimental techniques based on μ-electron beams. On the basis of the finding that the SE velocity enhances as the strength of the electrostatic field (EF) fed through the substrate enhances, it is strongly suggested that the driving force of SE is an EF rather than a DC current fed through the substrate. It is found that a patch of ultrathin In film changes to an In patch of 1 × 1 periodicity during SE which is accompanied by spotty parts (named fine-polygons) at both the cathode and anode sides of the In patch. It is found that the fine-polygons are created at the cathode side and are stationary but grow in size to be eventually incorporated into the In-patch. A few In-islands are found on the cathode side of the In-patch and they show no translation but cycles of appearance, growth, decay, and disappearance during SE, by which mass-transportation is achieved. A plausible microscopic model for the SE is presented based on these findings.