MOVPE growth of strain-compensated 1300 nm In1−xGaxAsyP1−y quantum well structures |
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Authors: | Christofer Silfvenius Bj rn St lnacke Gunnar Landgren |
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Affiliation: | Department of Electronics, Royal Institute of Technology (KTH), Electrum 229, S-164 40, Kista, Sweden |
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Abstract: | Different concepts for achieving strain-compensated quantum well structures emitting at 1300 nm have been investigated. Structures employing up to eight compressively strained wells with the same x in well and barrier exhibits excellent structural and optical properties, including very high photoluminescence efficiency. Increased number of quantum wells beyond 8 resulted in deteriorated materials quality, most likely due to accumulated strain-induced roughness of the growing surface. Good laser characteristics, including T0 values of 64 K, were demonstrated for strain-compensated structures with tensile wells. |
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