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Improved mobility of AIGaN channel heterojunction material using an AIGaN/GaN composite buffer layer |
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| Affiliation: | State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi＂ an 710071, China |
| Abstract: | AlGaN channel, heterojunction, mobility, electrical properties |
| Keywords: | AlGaN channel heterojunction mobility electrical properties |
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