| Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivationInterfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation |
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| 作者姓名： | 谭桢 赵连锋 王敬 许军 |
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| 作者单位： | Tsinghua National Laboratory fobr lnformation Science and Technology, Institute of Microelectronics, Tsinghua University, Beifing 100084, China |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grant No. 201 ICBA00602） and the National Science and Technology Major Project, China （Grant No. 2011 ZX02708-002）. |
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| 摘 要： | Interfacial and electrical properties of HfA10/GaSb metal-oxide-semiconductor capacitors （MOSCAPs） with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Dit of the HfAIO/GaSb interface by 35% and reduce the equivalent oxide thickness （EOT） from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy （HRXTEM） results. It was also found that GaSb-based MOSCAPs with HfA10 gate dielectrics have interfacial properties superior to those using HfO2 or A1203 dielectric layers.
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| 关 键 词： | HfAIO GaSb metal-oxide-semiconductor capacitors interracial properties |
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