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介孔TiO2-ZnO复合薄膜的制备与表征
引用本文:陶俊超,孙艳,徐建,王虎,陈鑫,戴宁. 介孔TiO2-ZnO复合薄膜的制备与表征[J]. 高等学校化学学报, 2008, 29(9): 1880-1884
作者姓名:陶俊超  孙艳  徐建  王虎  陈鑫  戴宁
作者单位:1. 中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083
2. 上海市计量测试技术研究院,上海,201203
基金项目:国家自然科学基金,上海市浦江人才计划,上海市科委资助项目,王宽诚基金会资助项目
摘    要:以三嵌段聚合物P123为模板剂, 以钛酸异丙酯和二水乙酸锌为无机前驱体, 利用溶胶-凝胶法和旋涂法成功地制备了不同ZnO含量的介孔TiO2-ZnO复合薄膜. 在ZnO前驱体摩尔分数为0~50%范围内获得薄膜质量较高的介孔TiO2-ZnO复合薄膜. 用小角XRD、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、能谱仪(EDS)、紫外-可见吸收光谱(UV-Vis)及X射线光电子能谱(XPS)对所得的复合薄膜进行了表征和分析. EDS和XPS等研究证明介孔薄膜为TiO2和ZnO的复合体系, 且ZnO前驱体含量的增加仍能保持TiO2-ZnO复合薄膜的均匀性. UV-Vis研究结果表明, 介孔复合薄膜的光学带隙宽度为3.45-3.58 eV, 随着ZnO含量的增加, 复合薄膜的紫外吸收蓝移.

关 键 词:介孔材料  TiO2-ZnO  复合薄膜
收稿时间:2008-04-03

Preparation and Characterization of Mesoporous TiO2-ZnO Thin Films
TAO Jun-Chao,SUN Yan,XU Jian,WANG Hu,CHEN Xin,DAI Ning. Preparation and Characterization of Mesoporous TiO2-ZnO Thin Films[J]. Chemical Research In Chinese Universities, 2008, 29(9): 1880-1884
Authors:TAO Jun-Chao  SUN Yan  XU Jian  WANG Hu  CHEN Xin  DAI Ning
Affiliation:National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; ;Shanghai Institute of Measurement and Test Technology, Shanghai 201203, China
Abstract:We reported the preparation of well-organized mesoporous TiO2-ZnO thin films with titanium isoproxide and zinc acetate dihydrate as the inorganic precursors and triblock copolymer(Pluronic P123) as the template via a sol-gel and spin-coating process.The molar fraction of ZnO could be tuned in the mesoporous TiO2-ZnO thin film by varying the molar fraction of Zn precursor in the range from 0 to 50%.The resulting films were characterized and analyzed via small-angle X-ray diffraction(SAXRD),scanning electron microscopy(SEM),high resolution transmission electron microscopy(HRTEM),energy-dispersive spectrometry(EDS),UV-Vis absorption spectrum and X-ray photoelectron spectroscopy(XPS).Both EDS and XPS demonstrate that the as-synthesized mesoporous thin films were made of TiO2 and ZnO.With ZnO molar fraction increased,the optical band gap of the thin films varied from 3.45 eV to 3.58 eV.
Keywords:TiO2-ZnO
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