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氧化锡多晶电导的氧空位控制模型
引用本文:何敬文,刘斌,王中纪.氧化锡多晶电导的氧空位控制模型[J].应用化学,1988,0(1):85.
作者姓名:何敬文  刘斌  王中纪
作者单位:中国科学院长春应用化学研究所,中国科学院长春应用化学研究所,中国科学院长春应用化学研究所
摘    要:SnO_2、ZnO等金属氧化物的气敏特性通常以它们在不同气氛中电导值的变化来体现。为弄清这类多晶材料及气敏元件电导变化的基本规律,本文根据表面势垒控制模型和晶界势垒控制模型讨论了氧空位密度对SnO_2多晶材料及气敏元件电导值的重要影响,并根据SnO_2多晶电导的氧空位控制模型,讨论了在不同烧结条件下元件电导的变化规律,并用X光电子能谱(XPS)对结果进行了分析。

关 键 词:氧化锡  气敏材料  多晶  电导
收稿时间:1987-02-16

OXYGEN VACANCY DOMINATION MODEL FOR ELECTRICAL CONDUCTIVITY OF POLYCRYSTALLINE TIN OXIDE
He Jingwen,Liu Bin and Wang Zhongji.OXYGEN VACANCY DOMINATION MODEL FOR ELECTRICAL CONDUCTIVITY OF POLYCRYSTALLINE TIN OXIDE[J].Chinese Journal of Applied Chemistry,1988,0(1):85.
Authors:He Jingwen  Liu Bin and Wang Zhongji
Abstract:By analysing the relationship between the density of oxygen vacancies and the surface potential barrier of SnO_2 grain, the effects of the oxygen vacancy density on the electrical conductivity of tin oxide gas sensors, as well as the process of production and recombination of the oxygen vacancies, an oxygen vacancy domination model for electrical conductivity of polyerystalline tin oxide is established. The model explaines the changes in electrical conductivity of the sensors under different sintering conditions. It has been verified by X-ray photoemission spectroscopy measurements.
Keywords:Tin oxide Gas sensitive devices Multicrystalline Electrical conductivity  
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