| 5.1-ps passively mode-locked Nd:Gd_(0.42)Y_(0.58)VO_4 laser with a LT-GaAs absorber |
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| 作者单位： | Department of Physics Dezhou University，Qingdao 53rd middle school，College of Physics and Electronics，Shandong Normal University，College of Physics and Electronics，Shandong Normal University，College of Physics and Electronics，Shandong Normal University，Dezhou 253023，Qingdao 266034，Ji'nan 250014，Ji'nan 250014，Ji'nan 250014 |
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| 摘 要： | We propose a diode end-pumped passively mode-locked Nd:Gd_(0.42)Y_(0.55)VO_4 (Nd:GdYVO_4) laser at 1064 nm using a GaAs absorber grown at low temperature as the output coupler.Stable continuous-wave (CW) mode locking with a 5.1-ps pulse duration at a repetition rate of 113 MHz is obtained.The maximum average output power is 2.29 W at the incident pump power of 12 W with the slope efficiency of about 24.8%.
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