Synthesis,Characterization, Electronic and Gas‐Sensing Properties towards H2 and CO of Transparent,Large‐Area,Low‐Layer Graphene |
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| Authors: | Emine Kayhan Ravi Mohan Prasad Dr. Alexander Gurlo Dr. Oktay Yilmazoglu Dr. Jörg Engstler Dr. Emanuel Ionescu Songhak Yoon Prof. Dr. Anke Weidenkaff Prof. Dr. Jörg J. Schneider |
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| Affiliation: | 1. Technische Universit?t Darmstadt, Eduard‐Zintl‐Institut, Fachbereich Chemie, Fachgebiet Anorganische Chemie, Petersenstrasse 18, 64287 Darmstadt (Germany), Fax: (+49)?6151‐163470;2. Technische Universit?t Darmstadt, Fachbereich Material‐ und Geowissenschaften, Petersenstrasse 22, 64287 Darmstadt (Germany);3. Technische Universit?t Darmstadt, Fachgebiet für Hochfrequenzelektronik, 64283 Darmstadt (Germany);4. EMPA, Solid State Chemistry and Catalysis, 8600 Dübendorf (Switzerland) |
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| Abstract: | Low‐layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni‐catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni‐catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10?4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p‐conducting characteristic of the synthesized graphene. Gas‐sensor measurements revealed a high sensor activity of the low‐layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported. |
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| Keywords: | chemical vapor deposition electrical properties graphene Raman spectroscopy sensors |
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