| Ni/4H-SiC 肖特基势垒磁场下输运性质的分析 |
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| 作者单位： | 中国科学技术大学结构分析重点实验室和材料科学与工程系,合肥,230026;中国科学技术大学物理系,合肥,230026 |
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| 摘 要： |
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| 关 键 词： | SiC 高真空电子束蒸发 肖特基接触 势垒 磁场 |
Current Transport Under High Magnetic Fields in Ni/4H-SiC Schottky Barrier |
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| Yang Wei,Li Guang,Li Xiaoguang,Xie Jiachun,Xu Jun. Current Transport Under High Magnetic Fields in Ni/4H-SiC Schottky Barrier[J]. Chinese Journal of Chemical Physics, 2004, 17(4): 449-453. DOI: 10.1088/1674-0068/17/4/449-453 |
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| Authors: | Yang Wei Li Guang Li Xiaoguang Xie Jiachun Xu Jun |
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| Abstract: | Ni/4H-SiC Schottky contacts with good characteristics were fabricated using electron beam evaporation to deposit Ni on 4H-SiC（（0001）Si face）. Current-voltage（I-V）characteristics of Ni / 4H-SiC Schottky barrier have been studied in the temperature range from 160 K to 300 K in magnetic fields（B）up to 10 T. The thermionic emission theory and relaxation time approximation Boltzmann eqation were employed to calculate the I - V characteristics，and it is found that the change of current shows a linear relation with B2 and V，and is inversely proportional to the temperature，which well agrees with experimental results. |
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| Keywords: | SiC，Schottky contacts，Barrier，Magnetic fields |
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