Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments |
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| Authors: | D A Ténné V A Gaisler N T Moshegov A I Toropov A P Shebanin |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch of the Russian Academy, of Sciences, 630090 Novosibirsk, Russia;(2) Joint Institute of Geology, Geophysics, and Mineralogy, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia |
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| Abstract: | Experiments on Raman scattering in the “forward” geometry, permitting observation of anisotropy of the optical phonons, are
performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces
covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular
dispersion of optical phonons in superlattices on the basis of a modified continuum model.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 50–55 (10 July 1998) |
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