Potential of Total Reflection and Grazing Incidence XRF for Contamination and Process Control in Semiconductor Fabrication |
| |
Authors: | Cornelia Weiss Joachim Knoth Heinrich Schwenke Holm Geisler Jürgen Lerche Rüdiger Schulz Hans-Jürgen Ullrich |
| |
Institution: | AMD Saxony Manufacturing GmbH, Wilschdorfer Landstra?szlige 101, D-01109 Dresden, Germany, DE GKSS-Forschungszentrum Geesthacht GmbH, D-21502 Geesthacht, Germany, DE Institut für Werkstoffwissenschaft, TU Dresden, D-01062 Dresden, Germany, DE
|
| |
Abstract: | The actual detection limits of total reflection X-ray fluorescence (TXRF) are determined and compared to those of destructive
physical analytical methods like secondary ion mass spectrometry (SIMS) and chemical methods like vapour phase decomposition
in combination with inductively coupled plasma-mass spectrometry (VPD-ICP-MS). The elements Ca, Ti, Cr, Fe, Cu were analyzed
on a Si wafer with 10 nm thermal oxide using TXRF and VPD-ICP-MS. The deviation of the TXRF and the VPD-ICP-MS results is
less than 30%. The thickness, composition and density of a Co/Ti two-layer stack were determined using angle dependent total
reflection and grazing incidence X-ray fluorescence (A-TXRF). The obtained data were compared with X-ray reflectometry (XRR)
and energy filtered transmission electron microscopy (EFTEM). The agreement between TEM and A-TXRF is excellent for the determination
of the thickness of the metal layers. From these results we conclude, that A-TXRF permits the accurate determination of composition,
thickness and density of thin metallic layers.
The results are discussed regarding detection efficiency, acquisition time, accuracy and reproducibility. |
| |
Keywords: | : TXRF VPD-ICP-MS EFTEM Si wafer metal contamination |
本文献已被 SpringerLink 等数据库收录! |
|