| 超薄溶液LPE技术生长GaInAsP/InP超晶格的理论与实验 |
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| 引用本文： | 李洵,陈根祥.超薄溶液LPE技术生长GaInAsP/InP超晶格的理论与实验[J].发光学报,1995,16(1):70-77. |
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| 作者姓名： | 李洵 陈根祥 |
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| 作者单位： | 北方交通大学光波技术研究所, 北京 100044 |
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| 摘 要： | 本文由有限厚度溶液及自由表面浓度和恒定表面浓度二种模型出发对LPE生长动力学过程进行了理论分析,并导出了实现薄层生长的参数控制条件,根据这一条件用LPE技术实际生长了GaInAsP/InP超晶格,570℃下用突冷法及被压缩到200μm～500μm的薄层溶液在0.2s的驻留时间内分别重复长出了5nm(Ga0.40In0.60As0.89P0.11)和10nm(InP)的超晶格,证明了用重复推拉舟的LPE系统在一定的参数条件下可以生长MQW结构.
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| 关 键 词： | 液相外延 量子阱 超晶格 |
| 收稿时间： | 1994-04-25 |
THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE |
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| Li Xun,Chen Genxiang,Jian Shuisheng.THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE[J].Chinese Journal of Luminescence,1995,16(1):70-77. |
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| Authors: | Li Xun Chen Genxiang Jian Shuisheng |
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| Institution: | Lightwave Technology Research Institute, Northern Jiaotong University, Beijing 100044 |
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| Abstract: | sing the "free surface concentration" and "constant surface concentration" models,growing processes of the LPE technique are described under bounded solution conditions and the parameters for very thin film growing are obtained.GalnAsP/InP supper lattice structures have been developed using these parameters.5um(Ga0.40In0.60As0.89P0.11)/10nm(InP)3 wells structure is accomplished reproducibly under the condition of l(the solution depth)=200μm～500μm,tg=0.2s and Tg=570℃.It has been proved that accurate LPE system is capable of growing MQW structure under suitable conditions. |
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| Keywords: | LPE MQW super lattice |
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