NaEu0.96Sm0.04(MoO4)2 as a promising red-emitting phosphor for LED solid-state lighting prepared by the Pechini process

NaEu_0.96Sm_0.04(MoO₄)₂ was prepared by the Pechini method (P phosphor) and as a comparison, also by solid-state reaction technique (S phosphor). The photo-luminescent properties, the morphology and the grain size were investigated. The phosphors show broadened excitation band around 400 nm, high intensity of Eu³⁺⁵D₀→⁷F₂ emission upon excitation around 400 nm, and appropriate CIE chromaticity coordinates. Intensive red light-emitting diodes (LEDs) were fabricated by combining the phosphor and a 400 nm InGaN chip for the first time, which confirm that the phosphor is a good candidate for near UV LED. The luminescent intensity of P phosphor prepared at 700 °C is near that of S phosphor prepared at 800 °C. In addition, P phosphor shows advantages of lower calcining temperature, shorter heating time, and smaller grain size. Considering all these factors, the suitable method for preparing the promising near UV LED phosphor NaEu_0.96Sm_0.04(MoO₄)₂ is recommended to be the Pechini process at 700 °C.