High intensity magnetic fields for the identification and study of donors in epitaxial gallium arsenide |
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Authors: | M. N. Afsar Kenneth J. Button Gary L. McCoy |
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Affiliation: | (1) Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, 02139 Cambridge, Massachusetts;(2) Air Force Avionics Laboratory Wright-Patterson Air Force Base, 45433, Ohio |
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Abstract: | High intensity magnetic fields are needed for the far infrared photoconductivity method to be used reliably in the identification of unitentional contaminants in ultra high purity epitaxial GaAs. We show experimental evidence that the inhomogeneous Stark broadening of the 1s 2p (m=–1) transition of the hydrogen-like donor almost disappears as the magnetic field is increased to 20 Tesla. Since the spectral lines also become narrower and the central cell correction (chemical shift) becomes larger, the signature curve method of identification permits positive identification of donor species. In particular, the donors Ge and Se have been identified in specimens that were reported to contain carbon and Sn respectively.Work supported by the U.S. Air Force Office of Scientific Research under Grant #AFOR-78-3708.Supported by the National Science Foundation. |
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Keywords: | semiconductors epitaxial GaAs farinfrared spectroscopy impurities in semiconductors |
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