| In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure |
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| 作者姓名： | 韩永昊 骆继锋 郝爱民 高春晓 谢鸿森 曲胜春 刘洪武 邹广田 |
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| 作者单位： | [1]StateKeyLaboratoryforSuperhardMaterials,JilinUniversity,Changchun130012 [2]InstituteofGeochemistry,ChineseAcademyofSciences,Guiyang550002 [3]InstituteofSemiconductors,ChineseAcademyofSciences，Beijing100083 |
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| 摘 要： | An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.
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| 关 键 词： | 电阻系数 硫化锌 铁砧菱形单元 高压条件 |
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