The influence of the Dresselhaus spin--orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

This paper investigates the effect of Dresselhaus spin--orbitcoupling on the spin-transport properties offerromagnet/insulator/semiconductor/insulator/ferromagnetdouble-barrier structures. The influence of the thickness of theinsulator between the ferromagnet and the semiconductor on thepolarization is also considered. The obtained results indicate that(i) the polarization can be enhanced by reducing the insulatorlayers at zero temperature, and (ii) the tunnelling magnetoresistanceinversion can be illustrated by the influence of the Dresselhausspin--orbit coupling effect in the double-barrier structure. Due tothe Dresselhaus spin--orbit coupling effect, the tunnellingmagnetoresistance inversion occurs when the energy of a localizedstate in the barrier matches the Fermi energy E_F of theferromagnetic electrodes.