Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing |
| |
Authors: | HAN Gen-Quan ZENG Yu-Gang YU Jin-Zhong CHENG Bu-Wen YANG Hai-Tao |
| |
Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084 |
| |
Abstract: | We present different relaxation mechanisms of Ge and SiGe quantum dotsunder excimer laser annealing. Investigation of the coarsening and relaxation of the dots shows that the strain in Ge dots on Ge films is relaxed by dislocation since there is no interface between the Ge dots and the Ge layer, while the SiGe dots on Si0.77Ge0.23 film relax by lattice distortion to coherent dots, which results from the obvious interface between the SiGe dots and theSi0.77Ge0.23 film. The results are suggested and sustained by Vanderbilt and Wickham's theory, and also demonstrate that no bulk diffusion occurs during the excimer laser annealing. |
| |
Keywords: | 68 65 Hb 68 35 Fx 68 35 Md 68 37 Ps |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
| 点击此处可从《中国物理快报》下载免费的PDF全文 |
|