| 外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算 |
| |
| 引用本文： | 陈熙,薛明伦. 外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算[J]. 力学学报, 1990, 22(1): 74-78. DOI: 10.6052/0459-1879-1990-1-1995-913 |
| |
| 作者姓名： | 陈熙 薛明伦 |
| |
| 作者单位： | 清华大学工程力学系 |
| |
| 摘 要： | 数值分析结果表明,外加磁场可以改变熔融半导体中的流型,几千高斯的磁场可以显著地减小熔体的流动,但对温度场影响不大。
|
| 关 键 词： | 磁场 半导体 CZ法 拉晶 流动场 |
INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION |
| |
| Abstract: | . Numerical results show that the external magnetic field influences significantly the flow field of molten semiconductors during Czochralski crystal growth process. The melt flow could be heavily damped by a magnetic field with intensity of several thousand gauss, while the temperature field is nearly unaffected because of very low Prandtl number. |
| |
| Keywords: | melt flow in GZ crystal growth magnetic field effect numerical simulation |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《力学学报》浏览原始摘要信息 |
|
点击此处可从《力学学报》下载全文 |
