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Effect of Discharge Plasma Potential on Diffusion Plasma Parameters Controlled by a Mesh Grid in a Double Plasma Device
Authors:M K Mishra  A Phukan  M Chakraborty
Institution:1. Department of Physics, Baosi.Banikanta.Kakati.College,Nagaon, Barpeta, Assam‐781311 India;2. Department of Physics, Madhabdev College, Narayanpur, Assam‐784164, India;3. Centre of Plasma Physics‐Institute for Plasma Research. Tepesia, Sonapur, Assam‐782402, India
Abstract:The plasma region under investigation is separated from the discharge region by a mesh grid. Plasma potential and electron number densities and electron temperatures under bi‐Maxwellian approximation for electron distribution function of the multi‐dipole argon plasma are measured. The cold electrons in the diffusion region are produced by local ionization. The hot electrons are the ionizing electrons behaving as Maxwellian. The electron trapping process in the discharge region is produced by potential well due to positive plasma potential with respect to the anode and by a repulsive grid. The dependence of ratios of the density of the hot to the cold electrons NE (=Neh/Nec) and hot to cold electron temperature T(=Teh/Tec) in the diffusion region on the depth of the potential well has been investigated. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:Hot electrons  cold electrons  grid  double plasma device
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