Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors |
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| Authors: | Dr. Liang‐Hsiang Chen Tarng‐Shiang Hu Dr. Peng‐Yi Huang Prof. Choongik Kim Ching‐Hao Yang Juin‐Jie Wang Dr. Jing‐Yi Yan Dr. Jia‐Chong Ho Dr. Cheng‐Chung Lee Prof. Ming‐Chou Chen |
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| Affiliation: | 1. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan (Republic of China);2. Department of Chemistry, National Central University, Jhong‐Li, Taiwan 32054 (Republic of China);3. Department of Chemical & Biomolecular Engineering, Sogang University, 1 Shinsoo‐Dong, Mapo‐Gu, Seoul 121‐742 (Republic of Korea) |
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| Abstract: | A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and p‐channel OTFT transport with hole mobilities as high as ～0.12 cm2 V?1 s?1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance. |
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| Keywords: | anthradithiophene electrochemistry organic semiconductors organic thin‐film transistors solution processes |
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