Enhanced Performance of Benzothieno[3,2‐b]thiophene (BTT)‐Based Bottom‐Contact Thin‐Film Transistors |
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| Authors: | Dr. Peng‐Yi Huang Dr. Liang‐Hsiang Chen Yu‐Yuan Chen Wen‐Jung Chang Juin‐Jie Wang Dr. Kwang‐Hwa Lii Dr. Jing‐Yi Yan Dr. Jia‐Chong Ho Dr. Cheng‐Chung Lee Prof. Choongik Kim Prof. Ming‐Chou Chen |
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| Affiliation: | 1. Department of Chemistry, National Central University, Chung‐Li, Taiwan (Republic of China);2. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan (Republic of China);3. Department of Chemical & Biomolecular Engineering, Sogang University, 1 Shinsoo‐Dong, Mapo‐Gu, Seoul 121‐742 (Republic of Korea) |
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| Abstract: | Three new benzothieno[3,2‐b]thiophene ( BTT ; 1 ) derivatives, which were end‐functionalized with phenyl ( BTT‐P ; 2 ), benzothiophenyl ( BTT‐BT ; 3 ), and benzothieno[3,2‐b]thiophenyl groups ( BBTT ; 4 ; dimer of 1 ), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTT s was developed, which enabled the efficient realization of new BTT ‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT , which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm2 V?1 s?1 and a current on/off ratio of 1×107, as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds. |
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| Keywords: | conjugation semiconductors thin films thiophenes transistors |
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