Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics |
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| Authors: | Dr Laia Vilà‐Nadal Dr Scott G Mitchell Dr Stanislav Markov Dr Christoph Busche Dr Vihar Georgiev Prof Asen Asenov Prof Leroy Cronin |
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| Institution: | 1. WestCHEM, School of Chemistry, Joseph Black Building, University of Glasgow, University Avenue, Glasgow, G12 8QQ (UK), Fax: (+44)?141‐330‐4888;2. Department of Electronics & Electrical Engineering, Rankine Building, University of Glasgow, Oakfield Avenue, Glasgow, G12 8QQ (UK) |
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| Abstract: | We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom‐built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non‐volatile molecular memories (NVMM) or flash‐RAM. |
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| Keywords: | nanoelectronics nanosystems polyoxometalates redox‐active systems |
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