Abstract: | Bi4‐xSbxTi3O12 (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by sol‐gel method. The effects of various Sb3+ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi4‐xSbxTi3O12 (x≠0) thin films prefer (117) orientation. The substitution Sb3+ for Bi3+ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi4‐xSbxTi3O12 films display exciting electric properties. Especially when x = 0.04, the film Bi3.96Sb0.04Ti3O12 has achieved the max 2Pr value of 87μC/cm2. This film also has a better anti‐fatigue characteristic, which can be up to 1010 switching cycles without fatigue. The leakage current density improved with J = 8×10−8 A/cm2. |