Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC |
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| Authors: | Myunghee Kim Jitsuo Ohta Atsushi Kobayashi Hiroshi Fujioka Masaharu Oshima |
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| Institution: | 1. Department of General Systems Studies, The University of Tokyo, 3‐8‐1 Komaba, Meguro‐ku, Tokyo 153‐8902, Japan;2. Institute of Industrial Science (IIS), The University of Tokyo, 4‐6‐1 Komaba, Tokyo 153‐8505, Japan;3. Kanagawa Academy of Science and Technology (KAST), 3‐2‐1 Sakado, Kawasaki 213‐0012, Japan;4. Department of Applied Chemistry, The University of Tokyo, 4‐3‐1 Hongo, Tokyo 113‐8656, Japan;5. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda‐ku, Tokyo 102‐0075, Japan |
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| Abstract: | AlN films have been grown on atomically flat carbon face 6H‐SiC (000 ) substrates by pulsed laser deposition and their structural properties have been investigated. In‐situ reflection high‐energy electron diffraction observations have revealed that growth of AlN at 710 °C proceeds in a Stranski–Krastanov mode, while typical layer‐by‐layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X‐ray rocking curves for 0004 and 10 2 diffractions of the RT‐grown AlN film are 0.05° and 0.07°, respectively. X‐ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 61 05 cp 61 05 jh 68 55 ag 81 05 Ea 81 15 Fg |
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