Silicon‐doping induced strain of AlN layers: a comparative luminescence and Raman study |
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| Authors: | Günther M. Prinz Martin Feneberg Martin Schirra Rolf Sauer Klaus Thonke Sarad B. Thapa Ferdinand Scholz |
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| Affiliation: | 1. Institut für Halbleiterphysik, Universit?t Ulm, 89069 Ulm, Germany;2. Institut für Optoelektronik, Universit?t Ulm, 89069 Ulm, Germany |
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| Abstract: | Si‐doped aluminum nitride layers show a shift of the near‐band‐edge luminescence at around 6 eV to lower energies for increasing Si concentration up to ≈(1–3) × 1019 cm–3. For higher concentrations, the luminescence shifts back to higher energies. This behavior is compared to concomitant shifts of the Raman‐active E2 vibrational mode and to X‐ray diffraction data. It can be explained in terms of increasing tensile strain which finally relaxes due to the formation of cracks. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 61.72.uj 78.30.Fs 78.60.Hk 78.66.Fd |
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