Calibrated numerical model of a GaInP–GaAs dual‐junction solar cell |
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| Authors: | S P Philipps M Hermle G Létay F Dimroth B M George A W Bett |
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| Institution: | 1. Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany;2. Synopsys, Affolternstr. 52, 8050 Zurich, Switzerland |
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| Abstract: | In this letter a calibrated numerical model of a III–V dual‐junction solar cell including tunnel diode and Bragg reflector is presented. The quantum efficiencies of the subcells are computed by using the principle of current‐limitation in monolithic multi‐junction solar cells. A special procedure with bias‐illumination and bias‐voltage was implemented. Numerical simulations are used to study the influence of the top cell thickness on the cells' quantum efficiency and on the current‐matching condition. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 81 05 Ea 84 60 Bk 84 60 Jt 85 30 De |
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