Band bending and quasi‐2DEG in the metallized β‐SiC(001) surface |
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| Authors: | R Rurali E Wachowicz P Hyldgaard P Ordejón |
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| Institution: | 1. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain;2. Institute of Experimental Physics, University of Wroc?aw, 50204 Wroc?aw, Poland;3. Department of Applied Physics, Chalmers University of Technology, 41296 G?teborg, Sweden;4. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 G?teborg, Sweden;5. Centre d'Investigació en Nanociència i Nanotecnologia – CIN2 (CSIC‐ICN), Campus UAB, 08193 Bellaterra, Spain |
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| Abstract: | We study the mechanism leading to the metallization of the β‐SiC(001) Si‐rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi‐2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first‐principles calculations, and uncovers the basic physics of the process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 68 43 − h 71 15 Mb 73 20 − r 73 21 Fg 73 40 Ns |
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