Impact of the Ga concentration on the microstructure of CuIn1–x Gax Se2 |
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| Authors: | D Abou‐Ras R Caballero C A Kaufmann M Nichterwitz K Sakurai S Schorr T Unold H W Schock |
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| Institution: | 1. Hahn‐Meitner‐Institut Berlin, Glienicker Stra?e 100, 14109 Berlin, Germany;2. Now at: Research Center for Photovoltaics, #2‐24412 AIST, 1‐1‐1 Umezono, Tsukuba, Ibaraki, 305‐8568, Japan |
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| Abstract: | Cross‐sectional samples of CuIn1–x Gax Se2 layers grown by a three‐stage process were studied by means of electron backscatter diffraction (EBSD) in completed thin‐film solar cells. The microstructural analysis reveals a dependence of the average grain size on the gallium content x = Ga]/(Ga] + In]), with a maximum at x = 0.23. This result is correlated with structural measurements on CuIn1–x Gax Se2 powder samples showing that the ratio of the lattice constants c /a is equal to 2 for about the same x value. The pseudocubic crystal structure at about x = 0.23 may lead to reduced strain in the growing CuIn1–x Gax Se2 layer and therefore larger average grain sizes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 61 14 Lj 61 72 Mm 68 37 Hk 68 55 Nq 73 50 Pz 73 61 Le |
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