Local chemical state change in Co–O resistance random access memory |
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| Authors: | Hisashi Shima Fumiyoshi Takano Hidenobu Muramatsu Masashi Yamazaki Hiroyuki Akinaga Akinori Kogure |
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| Affiliation: | 1. Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba, Ibaraki, Japan;2. Shimadzu Analytical & Measuring Center, Inc., Hatano, Kanagawa 259‐1304, Japan |
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| Abstract: | Kelvin probe force microscopy (KFM) and conductive atomic force microscopy (C‐AFM) together with micro X‐ray photoelectron spectroscopy (XPS) were performed for the stacking structure comprising of the transition metal oxide Co–O and metal electrode, which exhibits large reproducible resistance switching. The application of the external voltage by the C‐AFM cantilever decreases the resistance of Co–O, which well accords with the non‐polar forming process observed in the Pt/Co–O/Pt trilayer, known as the candidate of resistance random access memory (ReRAM). Furthermore, the KFM and micro XPS experimentally revealed that the local reductive reaction of Co–O possibly nucleates the defect related energy levels which dominates the current conduction in the low resistance state. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 68.37.Ps 73.40.Sx 79.60.Bm 85.90.+h |
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