Cones with a dual structure formed on Ar+-bombarded Si surfaces |
| |
| Institution: | 1. Alfréd Rényi Institute of Mathematics, Hungarian Academy of Sciences, Reltanoda u. 13-15, H-1053 Budapest, Hungary;2. Technische Universität Berlin, Institut für Mathematik, Sekr. Ma 4-1, Straße des 17 Juni 136, D-10623 Berlin, Germany;1. Dipartimento di Scienze Economiche e Statistiche, Università degli Studi di Napoli Federico II, Italy;2. CSEF, Italy;3. School of Applied Mathematics and Physical Sciences, Department of Mathematics, National Technical University of Athens, Greece;1. Alfréd Rényi Institute of Mathematics, Hungarian Academy of Sciences, Reltanoda u. 13-15, H-1053 Budapest, Hungary;2. Technische Universität Berlin, Institut für Mathematik, Sekr. Ma 4-1, Straße des 17 Juni 136, D-10623 Berlin, Germany |
| |
| Abstract: | Transmission electron microscopy disclosed that cones formed on crystalline Si surfaces bombarded with a few keV Ar+ ions were of a dual structure inexplicable by the existing models of cone formation. The outer region of the cones was composed of unoriented crystallites of Si, whereas the inner region was a single crystal oriented in the 〈111〉 direction. The polycrystalline region was too thick to explain its formation in terms of ion-induced disordering of the monocrystalline phase, suggesting that the redeposition of sputtered Si atoms was deeply concerned in evolving the cones. It is supposed that the present cone evolution involved particle supply processes underlying the growth of Si whiskers from the vapor phase. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
