Electronic properties of cleaved CdTe(110) surfaces |
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| Institution: | 1. School of Physics, Interdisciplinary Center for Quantum Information, Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou 310027, China;2. Department of Physics, University of Michigan Ann Arbor, Ann Arbor 48105, USA;3. Department of Physics, Xiamen University, Xiamen 361005, China;1. State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082, China;2. College of Mechanical and Electrical Engineering, Changsha University, Changsha 410022, China;3. Institute of Theoretical and Applied Physics, School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;1. Institute of Biomedical and Health Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China;2. School of Computer Science, University of Chinese Academy of Sciences, Beijing 100049, China;3. Micro-Nano Innovations (MiNI) Laboratory, Department of Biomedical Engineering, University of California, Davis, CA 95616, USA;4. Department of Ophthalmology, LongHua Hospital Shanghai University of Traditional Chinese Medicine, Shanghai 200032, China;5. Department of Ophthalmology, Shenzhen University General Hospital, Shenzhen University Clinical Medical Academy, Shenzhen 518055, China;6. TacSense, Inc., Woodland, CA 95776, USA;7. Shenzhen Engineering Laboratory of Single-molecule Detection and Instrument Development Shenzhen 518055, China;8. Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China;9. Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | Photoemission yield spectroscopy measurements were performed on a set of n- and p-doped CdTe single crystals. The surfaces were obtained by cleavage in ultrahigh vacuum and characterized by low energy electron diffraction and Auger electron spectroscopy. On clean and properly cleaved surfaces, no band bending was found, neither on n- nor on p-type samples, showing the absence of intrinsic surface states in the gap. The ionization energy is found at 5.80±0.05 eV. Oxygen adsorption removes defect-induced surface states on the valence band side of the gap and develops a band bending on n-type samples which indicates the presence of acceptor surface states in the gap down to 0.70 eV below the conduction band edge. The ionization energy remains constant. |
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