Epitaxy of Pt on Au(001): Growth mode,interface state and Pt core-level shifts |
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| Institution: | 1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, PR China;2. School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, 110178, PR China;1. JARA-Institute Green IT, RWTH Aachen, Germany;2. Peter Grünberg Institute 9 (PGI-9) and JARA-FIT, Forschungszentrum Jülich, 52425 Jülich, Germany;3. Central Institute for Engineering, Electronics and Analytics (ZEA-3), Forschungszentrum Jülich, 52425 Jülich, Germany;4. IHP Microelectronics, 15236 Frankfurt (Oder), Germany;5. Department of Sciences, Università Roma Tre, 00154 Rome, Italy;6. Univ. Grenoble Alpes, CEA, LETI, 38 000 Grenoble, France;7. Laboratory for Micro- and Nanotechnology, PSI, 5232 Villigen, Switzerland;1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, PR China;2. College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, PR China;3. Institute of Opto-Electronics, Nanjing University & Yangzhou, Yangzhou 225009, PR China |
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| Abstract: | The epitaxial growth of Pt deposited on Au(001) has been investigated by means of photoemission. The growth mode is layer-by-layer with an important degree of imperfection. Polar scans of the Pt 4f line intensities reveal qualitatively the degree of non-sequential filling of the different atomic layers. UPS measurements show evidence for an interface state at 1.0 eV below the Fermi energy. Core-level binding energy shifts of Pt atoms have been measured as a function of overlayer thickness. |
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