Electronic structure of strained Sin/Gen(001) superlattices |
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| Affiliation: | 1. Department of Physics, Madras Christian College, East Tambaram 600059, Tamil Nadu, India;2. Department of Physics, Arignar Anna Govt. Arts College, Cheyyar 604407, Tamil Nadu, India;3. Bioinformatics Infrastructure Facility for BITSnet, Madras Christian College, East Tambaram 600059, Tamil Nadu, India;1. Safety Research Center, Kureha Corporation, Tokyo 169-8503, Japan;2. Cooperative Major in Advanced Health Science, Tokyo University of Agriculture and Technology, Tokyo 184-8588, Japan;1. University of Florida College of Pharmacy, Department of Pharmacotherapy and Translational Research, United States;2. University of Florida College of Medicine, Department of Pathology, Immunology, and Laboratory Medicine, United States |
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| Abstract: | Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n=6 which can be considered to be quasi-direct. For the cases n=6 and n=8, the band gap might become direct for large values of band misfit. |
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