Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers |
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Authors: | CUI Bi-feng WANG Yang FANG Tian-xiao HAO Shuai CHENG Jin and LI Cai-fang |
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Institution: | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China |
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Abstract: | In order to obtain good optical characteristics in the GaN-based vertical-cavity surface-emitting laser (VCSEL), different kinds of AlGaN electron blocking layers (EBL) were introduced. These were inserted coherently near the active region to limit electron leakage into the p-doped side. The research was conducted by photonic integrated circuit simulator in three-dimensional (PICS3D). The simulated results reveal that an EBL can improve the optical characteristics of a VCSEL effectively. All the advantages are due to a reduction in the electron leakage in the quantum wells. While the voltage of the five-layer EBLs LD is lower than the voltage of the seven-layer EBLs LD, the output power of the two is approximately the same, so the five-layer EBLs is the best choice for comprehensive structure analysis as the epitaxial structure can be grown more easily on it. |
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