| GaN基PIN结构X射线探测器 |
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| 引用本文： | 付凯,于国浩,陆敏.GaN基PIN结构X射线探测器[J].发光学报,2011,32(7):720-723. |
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| 作者姓名： | 付凯 于国浩 陆敏 |
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| 作者单位： | 1. 中国科学院 苏州纳米技术与纳米仿生研究所, 江苏 苏州 215123;
2. 中国科学院 研究生院, 北京 100039 |
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| 基金项目： | 国家自然科学基金，江苏省自然科学基金，苏州市应用基础研究计划，国家重点 基础研究发展计划(G2009CR929300)资助项日 |
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| 摘 要： | 使用GaN基材料制备了PIN结构核辐射探测器,研究了探测器对x射线响应的多方面性能.在没有X射线照射时,探测器具有很小的漏电流,在-10 V时小于0.1nA.对探测器的X射线的响应时间特性进行了分析和模拟,给出了很好的物理机制解释.研究了信噪比随外加偏压的变化,并得到了最佳信噪比对应的工作电压为-20 V.
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| 关 键 词： | GaN X射线探测器 信噪比 时间响应 |
| 收稿时间： | 2011-02-15 |
GaN-based PIN Detectors for X-ray Detector |
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| FU Kai,YU Guo-hao,LU Min.GaN-based PIN Detectors for X-ray Detector[J].Chinese Journal of Luminescence,2011,32(7):720-723. |
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| Authors: | FU Kai YU Guo-hao LU Min |
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| Institution: | 1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou 215123, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | GaN-based PIN radiation detectors were fabricated, and various response properties of the detectors under X-ray irradiation were studied. In the absence of X-ray irradiation, the detectors have very low leakage current less than 0.1 nA at -10 V. Time response of the detectors to X-ray was analyzed and simulated, following a reasonable interpretation of the physical mechanism. The relationship between signal to noise ratio(SNR) and applied bias was investigated, and an optimum voltage of -20 V corresponding to the best SNR was found. |
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| Keywords: | GaN X-ray detector signal to noise ratio time response |
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