A surface adsorption model for electroless cobalt alloy thin films |
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| Authors: | Y. Shacham-Diamand Y. Sverdlov V. Bogush R. Ofek-Almog |
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| Affiliation: | (1) Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, Tel Aviv, 69978, Israel;(2) Department of Applied Chemistry, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, Japan;(3) The Research and Development Department of the Belarusian State University of Informatics and Radioelectronics (BSUIR), Minsk, Belarus |
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| Abstract: | Thin cobalt alloy films have been obtained using electroless deposition solution with two reducing agents: dimethylamine borane (DMAB) and sodium hypophosphite. This system allows spontaneous and self-activated deposition of barrier layers on Cu lines and via contacts for ultra large scale integration (ULSI) interconnects applications. This work presents a study of the solution composition effects on the material properties and composition of the films. First, we present the deposition rates, the electrical resistance, the various element profiles in the thin film, and the thin film roughness. Next, we discuss the film’s composition and its dependence on the ratio between the reducing agents composition in the solution. The experimental results suggest that the film phosphorous and boron composition is determined by the surface adsorption rates of the reducing agents. Therefore, a surface co-adsorption model of the two reducing agents is proposed, formulated, analyzed, and compared to the experimental results. Finally, we discuss the model and its significance to the formation of high-quality ultra-thin barrier layers. Dedicated to Professor Dr. Algirdas Vaskelis on the occasion of his 70th birthday. |
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| Keywords: | Cobalt Tungsten Phosphorous Boron Electroless deposition |
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