Features in the kinetics of lateral zone crystallization of semiconductor crystals in a temperature gradient field

Theoretical and experimental investigations of the kinetics of a lateral zone crystallization process in a temperature gradient field are given. Kinetic rules for the method are established which allow one to control the rate of the process and the configuration of the crystallization channel.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 67–71, January, 1996.