Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

摘要：
收稿时间：	2003-06-30
修稿时间：	2003-10-27
本文献已被 SpringerLink 等数据库收录！