Thermoelectric transport properties in disordered systems near the Anderson transition |
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Authors: | C Villagonzalo RA Römer M Schreiber |
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Institution: | Institut für Physik, Technische Universit?t, 09107 Chemnitz, Germany, DE
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Abstract: | We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator
transition (MIT). In particular, we investigate the dependence of the thermoelectric power S, the thermal conductivity K, and the Lorenz number L0 on temperature T. We first calculate the T dependence of the chemical potential μ from the number density n of electrons at the MIT using an averaged density of states obtained by diagonalization. Without any additional approximation,
we determine from the behavior of S, K and L0 at low T as the MIT is approached. We find that and K decrease to zero at the MIT as and show that S does not diverge. Both S and L0 become temperature independent at the MIT and depend only on the critical behavior of the conductivity.
Received 5 February 1999 |
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Keywords: | PACS 61 43 -j Disordered solids [:AND:]71 30 +h Metal-insulator transitions and other electronic transitions [:AND:]72 15 Cz Electrical and thermal conduction in amorphous and liquid metals and alloys |
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