单电子三势垒隧穿结I-V特性研究

在正统理论的基础上，提出了单电子三势垒隧穿结模型的主方程，并用线性方程组解法求出了其稳态解.通过数值模拟，得到了该系统的I-V特性曲线.发现其有别于双势垒隧穿结的情况，在传统库仑台阶的平台处曲线存在波纹状结构，分析得出这是由于第二个库仑岛上的电子数变化对I-V曲线的影响.此外，研究了各物理参数对I-V曲线的影响，发现三结系统可以降低对温度的要求，并应用Fermi能级处的能级间隔估算出出现库仑台阶现象的最高温度Tmax，为相关单电子器件的参数选择提供了理论依据.关键词：正统理论库仑台阶主方程隧穿概率

The study of I-V characteristics of single-electron triple-barrier tunnel-junction

The master equation of the single electron triple barrier tunnel junction(TBTJ) model is developed based on the orthodox theory. The steady distribution of electrons on the Coulomb islands is obtained with the linear system of equations method and the I V curves through the simulation method are presented in this paper. Discontinuities of the slope of the curve at the flat form of Coulomb staircase compared to double barrier tunnel junction system, which is caused by the change of the electron numbers on the second Coulomb island, are found. The system temperature requirement can be reduced in the TBTJ system, and the maximum temperature at which Coulomb staircase can be resolved is estimated using the energy spacing at the Fermi energy.