| GaAs MESFET可靠性及快速评价新方法的研究 |
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| 引用本文： | 李志国,宋增超,孙大鹏,程尧海,张万荣,周仲蓉.GaAs MESFET可靠性及快速评价新方法的研究[J].半导体学报,2003,24(8):856-860. |
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| 作者姓名： | 李志国 宋增超 孙大鹏 程尧海 张万荣 周仲蓉 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院,北京100022 |
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| 摘 要： | 提出了一种快速评价GaAsFET可靠性寿命的新方法.利用GaAsFET失效敏感参数的温度特性和在一定电应力下的退化特性,及温度斜坡法在线快速提取器件失效敏感参数的退化量与温度的关系,从而进一步求出器件的失效激活能等相关的可靠性物理参数.
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| 关 键 词： | GaAs FET 失效机理 快速评价 |
| 文章编号： | 0253-4177(2003)08-0856-05 |
| 修稿时间： | 2002年10月12日 |
GaAs MESFET's Reliability and New Method of Rapid Evaluation |
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| Li Zhiguo,Song Zengchao,Sun Dapeng,Cheng Yaohai,Zhang Wanrong and Zhou Zhongrong.GaAs MESFET''''s Reliability and New Method of Rapid Evaluation[J].Chinese Journal of Semiconductors,2003,24(8):856-860. |
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| Authors: | Li Zhiguo Song Zengchao Sun Dapeng Cheng Yaohai Zhang Wanrong and Zhou Zhongrong |
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| Abstract: | A new method for rapid evaluation of reliablility of GaAs FET is proposed.Basing on the temperature characteristics of GaAs FET's sensitive parameters for failure and its degrading characteristics under certain electrical stress,the relationship between the temperature and the degradation of sensitive parameters is extracted from the line through the method of temperature slope,then the related reliabilty physics parameters such as activating energy to failure can be figured out. |
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| Keywords: | GaAs FET fauilre mechanism repid evaluation |
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