Differential conductance switching of planar tunnel junctions mediated by oxidation/reduction of functionally protected ferrocene

Planar tunnel junctions were fabricated by self-assembling 1,1'- ferrocenedicarboxylic acid (FDCA) onto native oxides of thermally deposited aluminum films and subsequently depositing a second aluminum film. Junctions were characterized using Reflection-Absorption Fourier Transform Infrared Spectroscopy (RAIRS) and current-voltage (I-V) spectroscopy. Before deposition of the second aluminum film, RAIRS of FDCA and ferrocenecarboxylic acid (FCA) films revealed COO(-), C=O, and Fc ring stretching modes, indicating that both types of molecules can interact strongly with the oxide and remain intact. After deposition, systems exhibited prominent COO(-) modes and weakened C=O modes, indicating further reaction with aluminum/aluminum oxide. Fc ring modes persisted in FDCA systems but disappeared in FCA systems, suggesting that the second COOH group in the FDCA molecule can act as a protecting group for the ferrocene moiety. Cyclic I-V measurements of FDCA tunnel junction systems revealed very strong ( approximately 10-fold) hysteretic differential conductance switching that was both reversible and stable. Control measurements using as prepared junctions, as well as junctions containing 1,6-hexanedioic acid, 1,9-nonanedioic acid, 1,4-dibenzoic acid, or FCA revealed only very weak ( approximately 10%) differential conductance changes. We attribute FDCA junction switching to barrier profile modifications induced by oxidation/reduction of the functionally protected ferrocene moieties.