InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm:YAP laser |
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| Authors: | B. Q. Yao W. Wang Y. Tian G. Li Y. Z. Wang |
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| Affiliation: | 1.National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin,China |
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| Abstract: | A passively Q-switched mode-locking of diode-pumped TmYAP laser by use of InGaAs/GaAs as a saturable absorber is reported. The maximum Q-switched mode-locking output power was 480 mW near the wavelength range of 1.94 μm with pulse repetition frequency of 26.47 kHz. The beam quality was also measured to be 1.12 ± 0.02. |
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